Low Ron,sp.diff and Ultra-high Voltage 4H-SiC n-channel IGBTs with carrier lifetime enhancement process

التفاصيل البيبلوغرافية
العنوان: Low Ron,sp.diff and Ultra-high Voltage 4H-SiC n-channel IGBTs with carrier lifetime enhancement process
المؤلفون: Xiaolei, Yang, Shiyan, Li, Hao, Liu, Ao, Liu, Zhifei, Zhao, Yun, Li, Xianglong, Yang, Runhua, Huang, Song, Bai
المصدر: 2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS), 2020 17th China International Forum on. :42-44 Nov, 2020
Relation: 2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9780738111889
DOI:10.1109/SSLChinaIFWS51786.2020.9308751