Process Optimization of Trench Field Plate Power MOSFETs with Sequential Phosphorus-Doped Silicon

التفاصيل البيبلوغرافية
العنوان: Process Optimization of Trench Field Plate Power MOSFETs with Sequential Phosphorus-Doped Silicon
المؤلفون: Tomita, Kota, Shiraishi, Tatsuya, Kato, Hiroaki, Kishimoto, Hiroyuki, Miyashita, Katsura, Kobayashi, Kenya
المصدر: 2020 International Symposium on Semiconductor Manufacturing (ISSM) Semiconductor Manufacturing (ISSM, 2020 International Symposium on. :1-4 Dec, 2020
Relation: 2020 International Symposium on Semiconductor Manufacturing (ISSM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665403641
DOI:10.1109/ISSM51728.2020.9377528