Analysis of Drain Current Enhancement in "PN-Body Tied SOI-FET" -Bulk vs Surface Conduction Mode and Low Vds Saturation Effect-

التفاصيل البيبلوغرافية
العنوان: Analysis of Drain Current Enhancement in "PN-Body Tied SOI-FET" -Bulk vs Surface Conduction Mode and Low Vds Saturation Effect-
المؤلفون: Itoh, Hiroki, Ida, Jiro, Mori, Takayuki, Ishibashi, Koichiro
المصدر: 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) VLSI Technology, Systems and Applications (VLSI-TSA), 2021 International Symposium on. :1-2 Apr, 2021
Relation: 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
قاعدة البيانات: IEEE Xplore Digital Library