Gate drive techniques of Gate-connected Trench Field Plate Power MOSFETs to reduce both switching and conduction losses

التفاصيل البيبلوغرافية
العنوان: Gate drive techniques of Gate-connected Trench Field Plate Power MOSFETs to reduce both switching and conduction losses
المؤلفون: Nishiwaki, Tatsuya, Kachi, Tsuyoshi, Kawaguchi, Yusuke, Umekawa, Shinichi
المصدر: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2021 33rd International Symposium on. :155-158 May, 2021
Relation: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9784886864222
تدمد:19460201
DOI:10.23919/ISPSD50666.2021.9452278