مؤتمر
Gate drive techniques of Gate-connected Trench Field Plate Power MOSFETs to reduce both switching and conduction losses
العنوان: | Gate drive techniques of Gate-connected Trench Field Plate Power MOSFETs to reduce both switching and conduction losses |
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المؤلفون: | Nishiwaki, Tatsuya, Kachi, Tsuyoshi, Kawaguchi, Yusuke, Umekawa, Shinichi |
المصدر: | 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2021 33rd International Symposium on. :155-158 May, 2021 |
Relation: | 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
قاعدة البيانات: | IEEE Xplore Digital Library |
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