التفاصيل البيبلوغرافية
| العنوان: |
Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations |
| المؤلفون: |
Orfao, B., Vasallo, B.G., Moro-Melgar, D., Zaknoune, M., Gioia, G.Di, Samnouni, M., Perez, S., Gonzalez, T., Mateos, J. |
| المصدر: |
2021 13th Spanish Conference on Electron Devices (CDE) Electron Devices (CDE), 2021 13th Spanish Conference on. :94-97 Jun, 2021 |
| Relation: |
2021 13th Spanish Conference on Electron Devices (CDE) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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