مؤتمر
A Full-region Model for Ultra-Scaled MoS2 MOSFET Covering Direct Source-Drain Tunneling
| العنوان: | A Full-region Model for Ultra-Scaled MoS2 MOSFET Covering Direct Source-Drain Tunneling |
|---|---|
| المؤلفون: | Cai, Weiran, Lan, Wenrui, Ma, Zichao, Zhang, Lining, Chan, Mansun |
| المصدر: | 2021 9th International Symposium on Next Generation Electronics (ISNE) Next Generation Electronics (ISNE), 2021 9th International Symposium on. :1-3 Jul, 2021 |
| Relation: | 2021 9th International Symposium on Next Generation Electronics (ISNE) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
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