Ultra-Low Power Robust 3bit/cell Hf0.5Zr0.5O2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology

التفاصيل البيبلوغرافية
العنوان: Ultra-Low Power Robust 3bit/cell Hf0.5Zr0.5O2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology
المؤلفون: De, Sourav, Lu, Darsen D., Le, Hoang-Hiep, Mazumder, Soumen, Lee, Yao-Jen, Tseng, Wei-Chih, Qiu, Bo-Han, Baig, Md. Aftab, Sung, Po-Jung, Su, Chung-Jun, Wu, Chien-Ting, Wu, Wen-Fa, Yeh, Wen-Kuan, Wang, Yeong-Her
المصدر: 2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021
Relation: 2021 Symposium on VLSI Technology
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665419451
تدمد:21589682