التفاصيل البيبلوغرافية
| العنوان: |
STT-MRAM: A Robust Embedded Non-Volatile Memory with Superior Reliability and Immunity to External Magnetic Field and RF Sources |
| المؤلفون: |
Naik, V. B., Yamane, K., Kwon, J., K, S., Lim, J. H., Ali, Z., Behin-Aein, B., Chung, N. L., Hau, L. Y., Chao, R., Chiang, C., Huang, Y., Pu, L., Otani, Y., Dixit, H., Jang, S. H., Balasankaran, N., Tan, F., Neo, W. P., Goh, L. C., Toh, E. H., Ling, T., Ting, J. W., Yoon, H., Congedo, G., Mueller, J., Pfefferling, B., Kallensee, O., Vogel, A., Merbeth, T., Seet, C. S., Wong, J., Bordelon, J., You, Y. S., Soss, S., Chan, T. H., Quek, E., Siah, S. Y. |
| المصدر: |
2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021 |
| Relation: |
2021 Symposium on VLSI Technology |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
Full Text Finder