مؤتمر
Control of FSG/SiO/sub 2/ interlayer conditions to prevent Al-wiring delamination caused by F accumulation at Ti/SiO/sub 2/
العنوان: | Control of FSG/SiO/sub 2/ interlayer conditions to prevent Al-wiring delamination caused by F accumulation at Ti/SiO/sub 2/ |
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المؤلفون: | Kawashima, Y., Ichikawa, T., Nakamura, N., Kawano, B., Ide, T., Obata, S., Den, Y., Kudo, M. |
المصدر: | 2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203) Semiconductor manufacturing Semiconductor Manufacturing Symposium, 2001 IEEE International. :159-162 2001 |
Relation: | 2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings |
قاعدة البيانات: | IEEE Xplore Digital Library |
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