Control of FSG/SiO/sub 2/ interlayer conditions to prevent Al-wiring delamination caused by F accumulation at Ti/SiO/sub 2/

التفاصيل البيبلوغرافية
العنوان: Control of FSG/SiO/sub 2/ interlayer conditions to prevent Al-wiring delamination caused by F accumulation at Ti/SiO/sub 2/
المؤلفون: Kawashima, Y., Ichikawa, T., Nakamura, N., Kawano, B., Ide, T., Obata, S., Den, Y., Kudo, M.
المصدر: 2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203) Semiconductor manufacturing Semiconductor Manufacturing Symposium, 2001 IEEE International. :159-162 2001
Relation: 2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings
قاعدة البيانات: IEEE Xplore Digital Library