Scaling ferroelectric HZO thickness for low power Ge MFS-FTJ memories

التفاصيل البيبلوغرافية
العنوان: Scaling ferroelectric HZO thickness for low power Ge MFS-FTJ memories
المؤلفون: Siannas, Nikitas, Zacharaki, Christina, Tsipas, Polychronis, Chaitoglou, Stefanos, Begon-Lours, Laura, Dimoulas, Athanasios
المصدر: ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), ESSDERC 2021 - IEEE 51st European. :287-290 Sep, 2021
Relation: ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665437486
DOI:10.1109/ESSDERC53440.2021.9631382