Increased 3rd Quadrant Current Handling Capability of 1.2kV 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) with Minimal Impact on the Forward Conduction and Blocking Performances

التفاصيل البيبلوغرافية
العنوان: Increased 3rd Quadrant Current Handling Capability of 1.2kV 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) with Minimal Impact on the Forward Conduction and Blocking Performances
المؤلفون: Mancini, Stephen A, Jang, Seung Yup, Kim, Dongyoung, Sung, Woongje
المصدر: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Wide Bandgap Power Devices and Applications (WiPDA), 2021 IEEE 8th Workshop on. :101-106 Nov, 2021
Relation: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665401821
DOI:10.1109/WiPDA49284.2021.9645152