Understanding the ISPP Slope in Charge Trap Flash Memory and its Impact on 3-D NAND Scaling

التفاصيل البيبلوغرافية
العنوان: Understanding the ISPP Slope in Charge Trap Flash Memory and its Impact on 3-D NAND Scaling
المؤلفون: Verreck, D., Arreghini, A., Schanovsky, F., Rzepa, G., Stanojevic, Z., Mitterbauer, F., Kernstock, C., Baumgartner, O., Karner, M., Van den bosch, G., Rosmeulen, M.
المصدر: 2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :1-4 Dec, 2021
Relation: 2021 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665425728
تدمد:2156017X
DOI:10.1109/IEDM19574.2021.9720506