مؤتمر
SiN/in-situ-GaON Staggered Gate Stack on p-GaN for Enhanced Stability in Buried-Channel GaN p-FETs
| العنوان: | SiN/in-situ-GaON Staggered Gate Stack on p-GaN for Enhanced Stability in Buried-Channel GaN p-FETs |
|---|---|
| المؤلفون: | Zhang, Li, Zheng, Zheyang, Cheng, Yan, Ng, Yat Hon, Feng, Sirui, Song, Wenjie, Chen, Tao, Chen, Kevin J. |
| المصدر: | 2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :5.3.1-5.3.4 Dec, 2021 |
| Relation: | 2021 IEEE International Electron Devices Meeting (IEDM) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781665425728 |
|---|---|
| تدمد: | 2156017X |
| DOI: | 10.1109/IEDM19574.2021.9720653 |