مؤتمر
Implementation of a short channel (0.3 μm) for 4H-SiC MOSFETs with deep P-well using ‘channeling’ implantation
| العنوان: | Implementation of a short channel (0.3 μm) for 4H-SiC MOSFETs with deep P-well using ‘channeling’ implantation |
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| المؤلفون: | Kim, Dongyoung, Jang, Seung Yup, Morgan, Adam J., Sung, Woongje |
| المصدر: | 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :217-220 May, 2022 |
| Relation: | 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781665422017 9781665422000 |
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| تدمد: | 19460201 |
| DOI: | 10.1109/ISPSD49238.2022.9813633 |