AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices

التفاصيل البيبلوغرافية
العنوان:	AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices
المؤلفون:	Lundh, James Spencer, Masten, Hannah N., Sasaki, Kohei, Jacobs, Alan G., Cheng, Zhe, Spencer, Joseph, Chen, Lei, Gallagher, James, Koehler, Andrew D., Konishi, Keita, Graham, Samuel, Kuramata, Akito, Hobart, Karl D., Tadjer, Marko J.
المصدر:	2022 Device Research Conference (DRC) Device Research Conference (DRC), 2022. :1-2 Jun, 2022
Relation:	2022 Device Research Conference (DRC)
قاعدة البيانات:	IEEE Xplore Digital Library