Effect of impurity doping on 4H-SiC planarization

التفاصيل البيبلوغرافية
العنوان: Effect of impurity doping on 4H-SiC planarization
المؤلفون: Huang, Yuhua, Zhou, Yuqi, Li, Jinming, Zhu, Fulong
المصدر: 2022 23rd International Conference on Electronic Packaging Technology (ICEPT) Electronic Packaging Technology (ICEPT), 2022 23rd International Conference on. :1-5 Aug, 2022
Relation: 2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665499057
DOI:10.1109/ICEPT56209.2022.9873291