دورية أكاديمية
21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics With a Novel Drive Mode
| العنوان: | 21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics With a Novel Drive Mode |
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| المؤلفون: | Cicek, O., Arslan, E., Altindal, S., Badali, Y., Ozbay, E. |
| المصدر: | IEEE Sensors Journal IEEE Sensors J. Sensors Journal, IEEE. 22(24):23699-23704 Dec, 2022 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 1530437X 15581748 23799153 |
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| DOI: | 10.1109/JSEN.2022.3219553 |