التفاصيل البيبلوغرافية
العنوان: |
A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs |
المؤلفون: |
Qian, Jiashu, Liu, Tianshi, Soto, Jake, Al-Jassim, Mowafak M., Stahlbush, Robert, Mahadik, Nadeemullah, Shi, Limeng, Jin, Michael, Agarwal, Anant K. |
المصدر: |
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Wide Bandgap Power Devices & Applications (WiPDA), 2022 IEEE 9th Workshop on. :49-53 Nov, 2022 |
Relation: |
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) |
قاعدة البيانات: |
IEEE Xplore Digital Library |