A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs

التفاصيل البيبلوغرافية
العنوان: A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs
المؤلفون: Qian, Jiashu, Liu, Tianshi, Soto, Jake, Al-Jassim, Mowafak M., Stahlbush, Robert, Mahadik, Nadeemullah, Shi, Limeng, Jin, Michael, Agarwal, Anant K.
المصدر: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Wide Bandgap Power Devices & Applications (WiPDA), 2022 IEEE 9th Workshop on. :49-53 Nov, 2022
Relation: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
قاعدة البيانات: IEEE Xplore Digital Library