A Comparison of Short-Circuit Failure Mechanisms of 1.2 kV 4H-SiC MOSFETs and JBSFETs

التفاصيل البيبلوغرافية
العنوان: A Comparison of Short-Circuit Failure Mechanisms of 1.2 kV 4H-SiC MOSFETs and JBSFETs
المؤلفون: Kim, Dongyoung, DeBoer, Skylar, Jang, Seung Yup, Morgan, Adam J., Sung, Woongje
المصدر: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Wide Bandgap Power Devices & Applications (WiPDA), 2022 IEEE 9th Workshop on. :54-57 Nov, 2022
Relation: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665489003
تدمد:26878577
DOI:10.1109/WiPDA56483.2022.9955302