4H-SiC Trench MOSFET with Integrated Heterojunction Diode for Optimizing Switching Performance

التفاصيل البيبلوغرافية
العنوان: 4H-SiC Trench MOSFET with Integrated Heterojunction Diode for Optimizing Switching Performance
المؤلفون: Zhou, Chun-Ying, Ren, Min, Li, Xi, Ma, Rong-Yao, Zhang, Xin, Zheng, Fang, Liang, Shi-Qi, Li, Ze-Hong, Zhang, Bo
المصدر: 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Solid-State & Integrated Circuit Technology (ICSICT), 2022 IEEE 16th International Conference on. :1-3 Oct, 2022
Relation: 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665469067
DOI:10.1109/ICSICT55466.2022.9963188