TCAD Simulation Performance of VGAA for 4F2 High Density DRAM Cell

التفاصيل البيبلوغرافية
العنوان: TCAD Simulation Performance of VGAA for 4F2 High Density DRAM Cell
المؤلفون: Wang, Wen-Qi, Liu, Xiang, Yu, Yong, Xiao, De-Yuan, Ba, Lan-Song, Liang, Hong-Gang, Liang, Jing, Jeon, Jong-Sung, Su, Xing-Song, Han, Qing-Hua, Zhu, Jing-Fei, Meng, Jing-Heng, Dai, Jin, Sun, Hong-Bo, Wang, Gui-Lei, Tang, Yan-Zhe, Li, Hong-Wen, Xu, Wei-Feng, Kang, Bryan, Yoo, Abraham, Cao, Kan-Yu, Zhao, Chao
المصدر: 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Solid-State & Integrated Circuit Technology (ICSICT), 2022 IEEE 16th International Conference on. :1-3 Oct, 2022
Relation: 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665469067
DOI:10.1109/ICSICT55466.2022.9963197