دورية أكاديمية

Strain Modulated Asymmetrical Si/SiGe Superlattice p+-i-n+ Switches for MMW Low-Loss Secure Communication Systems

التفاصيل البيبلوغرافية
العنوان: Strain Modulated Asymmetrical Si/SiGe Superlattice p+-i-n+ Switches for MMW Low-Loss Secure Communication Systems
المؤلفون: Bhattacharya, S., Kundu, A., Chakraborty, D., Sarkar, A., Mukherjee, M.
المصدر: IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 23(1):14-26 Mar, 2023
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:15304388
15582574
DOI:10.1109/TDMR.2022.3224444