دورية أكاديمية
Device performances and instabilities of channel engineered amorphous InGaZnO thin film transistors
| العنوان: | Device performances and instabilities of channel engineered amorphous InGaZnO thin film transistors |
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| المؤلفون: | Lee, Jun Hyeong, Park, Young Hwan, Shin, Joong-Won, Cho, Won-Ju, Park, Jong Tae |
| المصدر: | In Microelectronics Reliability September 2019 100-101 |
| قاعدة البيانات: | ScienceDirect |
Full Text Finder | تدمد: | 00262714 |
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| DOI: | 10.1016/j.microrel.2019.113397 |