دورية أكاديمية
8 A, 200 V normally-off cascode GaN-on-Si HEMT: From epitaxy to double pulse testing
العنوان: | 8 A, 200 V normally-off cascode GaN-on-Si HEMT: From epitaxy to double pulse testing |
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المؤلفون: | Baby, Rijo, Mandal, Manish, Roy, Shamibrota K., Bardhan, Abheek, Muralidharan, Rangarajan, Basu, Kaushik, Raghavan, Srinivasan, Nath, Digbijoy N. |
المصدر: | In Microelectronic Engineering 15 October 2023 282 |
قاعدة البيانات: | ScienceDirect |
تدمد: | 01679317 |
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DOI: | 10.1016/j.mee.2023.112085 |