دورية أكاديمية
Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation
| العنوان: | Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation |
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| المؤلفون: | Cheng, Xinli, Liu, Hong, Zhang, Feng |
| المصدر: | In Applied Surface Science 15 March 2007 253(10):4472-4476 |
| قاعدة البيانات: | ScienceDirect |
Full Text Finder | تدمد: | 01694332 |
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| DOI: | 10.1016/j.apsusc.2006.09.057 |