دورية أكاديمية

Spatial arrangements and types of dislocations in interfacial networks obtained by Si(001) wafer bonding at low twist angle: A TEM characterization

التفاصيل البيبلوغرافية
العنوان: Spatial arrangements and types of dislocations in interfacial networks obtained by Si(001) wafer bonding at low twist angle: A TEM characterization
المؤلفون: Patout, L., Alfonso, C., Descoins, M., Fournel, F., Mangelinck, D., Mangelinck-Noël, N.
المصدر: In Materials Science in Semiconductor Processing December 2024 184
قاعدة البيانات: ScienceDirect
الوصف
تدمد:13698001
DOI:10.1016/j.mssp.2024.108814