تقرير
Sinterless contacts to shallow junction InP solar cells
| العنوان: | Sinterless contacts to shallow junction InP solar cells |
|---|---|
| المؤلفون: | Weizer, V. G, Fatemi, N. S, Korenyi-Both, A. L |
| بيانات النشر: | United States: NASA Center for Aerospace Information (CASI), 1992. |
| سنة النشر: | 1992 |
| مصطلحات موضوعية: | Energy Production And Conversion |
| الوصف: | In the past, the achievement of good electrical contact to InP has inevitably been accompanied by mechanical degradation of the InP itself. Most contact systems require heat treatment after metal deposition that results in the dissolution of substantial amounts of InP into the metallization. Devices such as the solar cell, where shallow junctions are the rule, can be severely degraded if the damage to the semiconductor substrate is not precisely controlled. Two contact systems are described that provide low contact resistance to InP solar cells that do not require subjecting the current carrying metallization to a post deposition sintering process. It is shown that these two systems, one nickel based and the other silver based, provide contact resistivity values in the low 10(exp -6) ohm sq cm range, as fabricated, without the need for sintering. |
| نوع الوثيقة: | Report |
| اللغة: | English |
| URL الوصول: | https://ntrs.nasa.gov/citations/19920015559 |
| ملاحظات: | NAS3-30759 NAS3-25266 RTOP 506-41-11 |
| رقم الأكسشن: | edsnas.19920015559 |
| قاعدة البيانات: | NASA Technical Reports |
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