تقرير
Anodic etching of p-type cubic silicon carbide
| العنوان: | Anodic etching of p-type cubic silicon carbide |
|---|---|
| المؤلفون: | Harris, G. L, Fekade, K, Wongchotigul, K |
| المصدر: | Journal of Materials Science: Materials in Electronics. 3(3 Se) |
| بيانات النشر: | United States: NASA Center for Aerospace Information (CASI), 1992. |
| سنة النشر: | 1992 |
| مصطلحات موضوعية: | Nonmetallic Materials |
| الوصف: | p-Type cubic silicon carbide was anodically etched using an electrolyte of HF:HCl:H2O. The etching depth was determined versus time with a fixed current density of 96.4 mA/sq cm. It was found that the etching was very smooth and very uniform. An etch rate of 22.7 nm/s was obtained in a 1:1:50 HF:HCl:H2O electrolyte. |
| نوع الوثيقة: | Report |
| اللغة: | English |
| تدمد: | 0957-4522 |
| DOI: | 10.1007/BF00695513 |
| URL الوصول: | https://ntrs.nasa.gov/citations/19920074403 |
| ملاحظات: | NSF RII-87-14676 NAG3-431 NSF RII-84-13805 |
| رقم الأكسشن: | edsnas.19920074403 |
| قاعدة البيانات: | NASA Technical Reports |
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