تقرير
Probing the Origin of the Open Circuit Voltage in Perovskite Quantum Dot Photovoltaics
| العنوان: | Probing the Origin of the Open Circuit Voltage in Perovskite Quantum Dot Photovoltaics |
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| المؤلفون: | Brian M. Wieliczka, Jose A. Marquez, Alexandra M. Bothwell, Qian Zhao, Taylor Moot, Kaitlyn T. VanSant, Andrew J. Ferguson, Thomas Unold, Darius Kuciauskas, Joseph M. Luther |
| المصدر: | ACS Nano. 15(12) |
| بيانات النشر: | United States: NASA Center for Aerospace Information (CASI), 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Energy Production And Conversion |
| الوصف: | Perovskite quantum dots (PQDs) have many properties that make them attractive for optoelectronic applications, including expanded compositional tunability and crystallographic stabilization. While they have not achieved the same photovoltaic (PV) efficiencies of top-performing perovskite thin films, they do reproducibly show high open circuit voltage (VOC) in comparison. Further understanding of the VOC attainable in PQDs as a function of surface passivation, contact layers, and PQD composition will further progress the field and may lend useful lessons for non-QD perovskite solar cells. Here, we use photoluminescence-based spectroscopic techniques to understand and identify the governing physics of the VOC in CsPbI3 PQDs. In particular, we probe the effect of the ligand exchange and contact interfaces on the VOC and free charge carrier concentration. The free charge carrier concentration is orders of magnitude higher than in typical perovskite thin films and could be tunable through ligand chemistry. Tuning the PQD A-site cation composition via replacement of Cs+ with FA+ maintains the background carrier concentration but reduces the trap density by up to a factor of 40, reducing the VOC deficit. These results dictate how to improve PQD optoelectronic properties and PV device performance and explain the reduced interfacial recombination observed by coupling PQDs with thin-film perovskites for a hybrid absorber layer. |
| نوع الوثيقة: | Report |
| اللغة: | English |
| تدمد: | 1936-086X 1936-0851 |
| DOI: | 10.1021/acsnano.1c05642 |
| URL الوصول: | https://ntrs.nasa.gov/citations/20210026682 |
| ملاحظات: | 255421.04.22.20.01 DE-AC36-08GO28308 SURPRISE 423749265 NSF 21576140 EERE 34361 |
| رقم الأكسشن: | edsnas.20210026682 |
| قاعدة البيانات: | NASA Technical Reports |
Find this issue from the American Chemical Society | تدمد: | 1936086X 19360851 |
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| DOI: | 10.1021/acsnano.1c05642 |