مؤتمر
Morphological study of Sol-Gel derived ZnO:In thin films
| العنوان: | Morphological study of Sol-Gel derived ZnO:In thin films |
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| المؤلفون: | Ivanova, T., Harizanova, A., Koutzarova, T., Vertruyen, Bénédicte, Stefanov, B. |
| المصدر: | Proceedings of the International Spring Seminar on Electronics Technology (2017); 40th International Spring Seminar on Electronics Technology, ISSE 2017, 10 May 2017 through 14 May 2017 |
| بيانات النشر: | IEEE Computer Society, 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | Crystal structure, Energy gap, Indium, Semiconductor doping, Sol-gels, Thin films, Zinc oxide, Zinc sulfide, Crystal phasis, Indium concentration, Indium doping, Morphological study, Nanostructured thin film, Root mean squared, Type structures, Wurtzite structure, Optical films, Physical, chemical, mathematical & earth Sciences, Chemistry, Engineering, computing & technology, Materials science & engineering, Physics, Physique, chimie, mathématiques & sciences de la terre, Chimie, Ingénierie, informatique & technologie, Science des matériaux & ingénierie, Physique |
| الوصف: | This work presents morphological, structural and optical studies of ZnO and ZnO:In nanostructured thin films depending on In doping (four different concentrations). XRD study of 600°C annealed ZnO:In films reveals that crystallization strongly depends on indium concentration. The films are crystallized in wurtzite structure and only for the films with highest In addition, two crystal phases are detected wurtzite ZnO and cubic In2O3. The AFM investigation reveals that the lowest Root Mean Squared Roughness(RMS) is revealed for ZnO:In 0.5 film (15.96 nm) and the roughness increases up to 64.52 nm for ZnO:In 1. Columnar type structures can be observed in the AFM micrographs of the other two films - ZnO:In 2 and ZnO:In 3, as the columns vary in height and size. The effect of the indium doping into ZnO reveals changing of optical transmittance compared to ZnO film. The optical band gap of ZnO:In films, annealed at 600°C is in the range of 3.06-3.27 eV. © 2017 IEEE. |
| نوع الوثيقة: | conference paper http://purl.org/coar/resource_type/c_5794 conferenceObject |
| اللغة: | English |
| Relation: | urn:issn:2161-2528 |
| DOI: | 10.1109/ISSE.2017.8000965 |
| URL الوصول: | https://orbi.uliege.be/handle/2268/225770 |
| حقوق: | restricted access http://purl.org/coar/access_right/c_16ec info:eu-repo/semantics/restrictedAccess |
| رقم الأكسشن: | edsorb.225770 |
| قاعدة البيانات: | ORBi |
| DOI: | 10.1109/ISSE.2017.8000965 |
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