دورية أكاديمية
Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses
العنوان: | Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses |
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المؤلفون: | Zhao, JingtaoAff1, Aff2, Chen, Quanyou, Chen, ChaoyangAff1, Aff2, Chen, ZhidongAff1, Aff2, Liu, ZhongAff1, Aff2, Zhao, GangAff1, Aff2, IDs4159802221324y_cor6 |
المصدر: | Scientific Reports. 12(1) |
قاعدة البيانات: | Springer Nature Journals |
تدمد: | 20452322 |
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DOI: | 10.1038/s41598-022-21324-y |