دورية أكاديمية

Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses

التفاصيل البيبلوغرافية
العنوان: Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses
المؤلفون: Zhao, JingtaoAff1, Aff2, Chen, Quanyou, Chen, ChaoyangAff1, Aff2, Chen, ZhidongAff1, Aff2, Liu, ZhongAff1, Aff2, Zhao, GangAff1, Aff2, IDs4159802221324y_cor6
المصدر: Scientific Reports. 12(1)
قاعدة البيانات: Springer Nature Journals
الوصف
تدمد:20452322
DOI:10.1038/s41598-022-21324-y