التفاصيل البيبلوغرافية
| العنوان: |
Hydrogen control of ferromagnetism in a dilute magnetic semiconductor. |
| المؤلفون: |
Goennenwein ST; Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, D-85748 Garching, Germany. goennenwein@tnw.tudelft.nl, Wassner TA, Huebl H, Brandt MS, Philipp JB, Opel M, Gross R, Koeder A, Schoch W, Waag A |
| المصدر: |
Physical review letters [Phys Rev Lett] 2004 Jun 04; Vol. 92 (22), pp. 227202. Date of Electronic Publication: 2004 Jun 03. |
| نوع المنشور: |
Journal Article |
| اللغة: |
English |
| بيانات الدورية: |
Publisher: American Physical Society Country of Publication: United States NLM ID: 0401141 Publication Model: Print-Electronic Cited Medium: Print ISSN: 0031-9007 (Print) Linking ISSN: 00319007 NLM ISO Abbreviation: Phys Rev Lett Subsets: PubMed not MEDLINE |
| أسماء مطبوعة: |
Original Publication: New York : American Physical Society |
| مستخلص: |
We show that upon exposure to a remote dc hydrogen plasma, the magnetic and electronic properties of the dilute magnetic semiconductor Ga1-xMnxAs change qualitatively. While the as-grown Ga1-xMnxAs thin films are ferromagnetic at temperatures T less, similar 70 K, the samples are found to be paramagnetic after the hydrogenation, with a Brillouin-type magnetization curve even at T=2 K. Comparing magnetization and electronic transport measurements, we conclude that the density of free holes p is significantly reduced by the plasma process, while the density of Mn magnetic moments does not change. |
| تواريخ الأحداث: |
Date Created: 20040713 Date Completed: 20040720 Latest Revision: 20040712 |
| رمز التحديث: |
20240628 |
| DOI: |
10.1103/PhysRevLett.92.227202 |
| PMID: |
15245256 |
| قاعدة البيانات: |
MEDLINE |
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