التفاصيل البيبلوغرافية
| العنوان: |
Direct-gap gain and optical absorption in germanium correlated to the density of photoexcited carriers, doping, and strain. |
| المؤلفون: |
Carroll L; Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, Villigen, Switzerland., Friedli P, Neuenschwander S, Sigg H, Cecchi S, Isa F, Chrastina D, Isella G, Fedoryshyn Y, Faist J |
| المصدر: |
Physical review letters [Phys Rev Lett] 2012 Aug 03; Vol. 109 (5), pp. 057402. Date of Electronic Publication: 2012 Aug 01. |
| نوع المنشور: |
Journal Article |
| اللغة: |
English |
| بيانات الدورية: |
Publisher: American Physical Society Country of Publication: United States NLM ID: 0401141 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1079-7114 (Electronic) Linking ISSN: 00319007 NLM ISO Abbreviation: Phys Rev Lett Subsets: PubMed not MEDLINE |
| أسماء مطبوعة: |
Original Publication: New York : American Physical Society |
| مستخلص: |
Direct-gap gain up to 850 cm(-1) at 0.74 eV is measured and modeled in optically pumped Ge-on-Si layers for photoexcited carrier densities of 2.0 × 10(20) cm(-3). The gain spectra are correlated to carrier density via plasma-frequency determinations from reflection spectra. Despite significant gain, optical amplification cannot take place, because the carriers also generate pump-induced absorption of ≈7000 cm(-1). Parallel studies of III-V direct-gap InGaAs layers validate our spectroscopy and modeling. Our self-consistent results contradict current explanations of lasing in Ge-on-Si cavities. |
| تواريخ الأحداث: |
Date Created: 20120926 Date Completed: 20121221 Latest Revision: 20120925 |
| رمز التحديث: |
20240628 |
| DOI: |
10.1103/PhysRevLett.109.057402 |
| PMID: |
23006206 |
| قاعدة البيانات: |
MEDLINE |
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