| المؤلفون: |
Wan NH; Research Laboratory of Electronics , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States., Shields BJ; Department of Physics , University of Basel , Klingelbergstrasse 82 , CH-4056 Basel , Switzerland., Kim D; Research Laboratory of Electronics , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States., Mouradian S; Research Laboratory of Electronics , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States., Lienhard B; Research Laboratory of Electronics , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States., Walsh M; Research Laboratory of Electronics , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States., Bakhru H; College of Nanoscale Science and Engineering , SUNY Polytechnic Institute , Albany , New York 12203 , United States., Schröder T; Research Laboratory of Electronics , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States., Englund D; Research Laboratory of Electronics , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States. |
| مستخلص: |
Quantum emitters in solids are being developed for a range of quantum technologies, including quantum networks, computing, and sensing. However, a remaining challenge is the poor photon collection due to the high refractive index of most host materials. Here we overcome this limitation by introducing monolithic parabolic reflectors as an efficient geometry for broadband photon extraction from quantum emitter and experimentally demonstrate this device for the nitrogen-vacancy (NV) center in diamond. Simulations indicate a photon collection efficiency exceeding 75% across the visible spectrum and experimental devices, fabricated using a high-throughput gray scale lithography process, demonstrating a photon extraction efficiency of (41 ± 5)%. This device enables a raw experimental detection efficiency of (12 ± 1)% with fluorescence detection rates as high as (4.114 ± 0.003) × 10 6 counts per second (cps) from a single NV center. Enabled by our deterministic emitter localization and fabrication process, we find a high number of exceptional devices with an average count rate of (3.1 ± 0.9) × 10 6 cps. |
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