دورية أكاديمية
Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence.
العنوان: | Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence. |
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المؤلفون: | Bothwell AM; Department of Physics, Colorado State University; Alexandra.Bothwell@colostate.edu., Drayton JA; Department of Physics, Colorado State University., Jundt PM; Department of Physics, Colorado State University., Sites JR; Department of Physics, Colorado State University. |
المصدر: | Journal of visualized experiments : JoVE [J Vis Exp] 2020 Mar 06 (157). Date of Electronic Publication: 2020 Mar 06. |
نوع المنشور: | Journal Article; Research Support, U.S. Gov't, Non-P.H.S.; Video-Audio Media |
اللغة: | English |
بيانات الدورية: | Publisher: MYJoVE Corporation Country of Publication: United States NLM ID: 101313252 Publication Model: Electronic Cited Medium: Internet ISSN: 1940-087X (Electronic) Linking ISSN: 1940087X NLM ISO Abbreviation: J Vis Exp Subsets: MEDLINE |
أسماء مطبوعة: | Original Publication: [Boston, Mass. : MYJoVE Corporation, 2006]- |
مواضيع طبية MeSH: | Electricity* , Luminescence* , Solar Energy* , Sublimation, Chemical*, Cadmium Compounds/*chemistry , Selenium Compounds/*chemistry , Tellurium/*chemistry, Automation ; Metals/chemistry ; Temperature ; Vacuum ; Volatilization |
مستخلص: | Developments in photovoltaic device architectures are necessary to make solar energy a cost-effective and reliable source of renewable energy amidst growing global energy demands and climate change. Thin film CdTe technology has demonstrated cost-competitiveness and increasing efficiencies due partially to rapid fabrication times, minimal material usage, and introduction of a CdSeTe alloy into a ~3 μm absorber layer. This work presents the close-space sublimation fabrication of thin, 1.5 µm CdSeTe/CdTe bilayer devices using an automated in-line vacuum deposition system. The thin bilayer structure and fabrication technique minimize deposition time, increase device efficiency, and facilitate future thin absorber-based device architecture development. Three fabrication parameters appear to be the most impactful for optimizing thin CdSeTe/CdTe absorber devices: substrate preheat temperature, CdSeTe:CdTe thickness ratio, and CdCl2 passivation. For proper sublimation of the CdSeTe, the substrate temperature prior to deposition must be ~540 °C (higher than that for CdTe) as controlled by dwell time in a preheat source. Variation in the CdSeTe:CdTe thickness ratio reveals a strong dependence of device performance on this ratio. The optimal absorber thicknesses are 0.5 μm CdSeTe/1.0 μm CdTe, and non-optimized thickness ratios reduce efficiency through back-barrier effects. Thin absorbers are sensitive to CdCl2 passivation variation; a much less aggressive CdCl2 treatment (compared to thicker absorbers) regarding both temperature and time yields optimal device performance. With optimized fabrication conditions, CdSeTe/CdTe increases device short-circuit current density and photoluminescence intensity compared to single-absorber CdTe. Additionally, an in-line close-space sublimation vacuum deposition system offers material and time reduction, scalability, and attainability of future ultra-thin absorber architectures. |
المشرفين على المادة: | 0 (Cadmium Compounds) 0 (Metals) 0 (Selenium Compounds) A7F646JC5C (cadmium selenide) NQA0O090ZJ (Tellurium) STG188WO13 (cadmium telluride) |
تواريخ الأحداث: | Date Created: 20200324 Date Completed: 20200918 Latest Revision: 20200918 |
رمز التحديث: | 20231215 |
DOI: | 10.3791/60937 |
PMID: | 32202534 |
قاعدة البيانات: | MEDLINE |
تدمد: | 1940-087X |
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DOI: | 10.3791/60937 |