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Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates.

التفاصيل البيبلوغرافية
العنوان: Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates.
المؤلفون: Popov VP; Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, Russia., Tikhonenko FV; Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, Russia., Antonov VA; Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, Russia., Tyschenko IE; Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, Russia., Miakonkikh AV; Valiev Institute of Physics and Technology RAS, 117218 Moscow, Russia., Simakin SG; Valiev Institute of Physics and Technology RAS, 117218 Moscow, Russia., Rudenko KV; Valiev Institute of Physics and Technology RAS, 117218 Moscow, Russia.
المصدر: Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2021 Jan 22; Vol. 11 (2). Date of Electronic Publication: 2021 Jan 22.
نوع المنشور: Journal Article
اللغة: English
بيانات الدورية: Publisher: MDPI AG Country of Publication: Switzerland NLM ID: 101610216 Publication Model: Electronic Cited Medium: Print ISSN: 2079-4991 (Print) Linking ISSN: 20794991 NLM ISO Abbreviation: Nanomaterials (Basel) Subsets: PubMed not MEDLINE
أسماء مطبوعة: Original Publication: Basel, Switzerland : MDPI AG, [2011]-
مستخلص: Silicon semiconductor-insulator-semiconductor (SIS) structures with high-k dielectrics are a promising new material for photonic and CMOS integrations. The "diode-like" currents through the symmetric atomic layer deposited (ALD) HfO 2 /Al 2 O 3 /HfO 2 … nanolayers with a highest rectification coefficient 10 3 are observed and explained by the asymmetry of the upper and lower heterointerfaces formed by bonding and ALD processes. As a result, different spatial charge regions (SCRs) are formed on both insulator sides. The lowest leakages are observed through the stacks, with total Al 2 O 3 thickness values of 8-10 nm, which also provide a diffusive barrier for hydrogen. The dominant mechanism of electron transport through the built-in insulator at the weak field E < 1 MV/cm is thermionic emission. The Poole-Frenkel (PF) mechanism of emission from traps dominates at larger E values. The charge carriers mobility 100-120 cm 2 /(V s) and interface states (IFS) density 1.2 × 10 11 cm -2 are obtained for the n-p SIS structures with insulator HfO 2 :Al 2 O 3 (10:1) after rapid thermal annealing (RTA) at 800 °C. The drain current hysteresis of pseudo-metal-oxide-semiconductor field effect transistor (MOSFET) with the memory window 1.2-1.3 V at the gate voltage |V g | < ±2.5 V is maintained in the RTA treatment at T = 800-900 °C for these transistors.
Competing Interests: The authors declare no conflict of interest.
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معلومات مُعتمدة: 18-42-540008 "Ferroelectric properties of metastable hafnium dioxide layers in SOS and SOI field-effect transistors" Russian Foundation for Fundamental Investigations; no.19-29-03031 "Logic elements and architecture of information storage and processing chips with artificial intelligence based on two-gate ferroelectric transistors" Russian Foundation for Basic Research; 066-2019-0004 Ministry of Science and Higher Education of the Russian Federation
فهرسة مساهمة: Keywords: SIS structures; diode and FET characteristics; ferroelectric hysteresis; leakage mechanisms; silicon-on-ferroelectric
تواريخ الأحداث: Date Created: 20210127 Latest Revision: 20210228
رمز التحديث: 20221213
مُعرف محوري في PubMed: PMC7912112
DOI: 10.3390/nano11020291
PMID: 33499413
قاعدة البيانات: MEDLINE
الوصف
تدمد:2079-4991
DOI:10.3390/nano11020291