دورية أكاديمية
Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates.
العنوان: | Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates. |
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المؤلفون: | Popov VP; Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, Russia., Tikhonenko FV; Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, Russia., Antonov VA; Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, Russia., Tyschenko IE; Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, Russia., Miakonkikh AV; Valiev Institute of Physics and Technology RAS, 117218 Moscow, Russia., Simakin SG; Valiev Institute of Physics and Technology RAS, 117218 Moscow, Russia., Rudenko KV; Valiev Institute of Physics and Technology RAS, 117218 Moscow, Russia. |
المصدر: | Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2021 Jan 22; Vol. 11 (2). Date of Electronic Publication: 2021 Jan 22. |
نوع المنشور: | Journal Article |
اللغة: | English |
بيانات الدورية: | Publisher: MDPI AG Country of Publication: Switzerland NLM ID: 101610216 Publication Model: Electronic Cited Medium: Print ISSN: 2079-4991 (Print) Linking ISSN: 20794991 NLM ISO Abbreviation: Nanomaterials (Basel) Subsets: PubMed not MEDLINE |
أسماء مطبوعة: | Original Publication: Basel, Switzerland : MDPI AG, [2011]- |
مستخلص: | Silicon semiconductor-insulator-semiconductor (SIS) structures with high-k dielectrics are a promising new material for photonic and CMOS integrations. The "diode-like" currents through the symmetric atomic layer deposited (ALD) HfO Competing Interests: The authors declare no conflict of interest. |
References: | Opt Express. 2014 May 5;22(9):10487-93. (PMID: 24921750) Nanomaterials (Basel). 2019 Aug 17;9(8):. (PMID: 31426467) Nat Commun. 2020 Mar 13;11(1):1391. (PMID: 32170177) Science. 2009 Apr 3;324(5923):63-6. (PMID: 19228998) Phys Rev Lett. 1994 Oct 10;73(15):2107-2110. (PMID: 10056973) Rep Prog Phys. 2020 Aug;83(8):086501. (PMID: 32357345) |
معلومات مُعتمدة: | 18-42-540008 "Ferroelectric properties of metastable hafnium dioxide layers in SOS and SOI field-effect transistors" Russian Foundation for Fundamental Investigations; no.19-29-03031 "Logic elements and architecture of information storage and processing chips with artificial intelligence based on two-gate ferroelectric transistors" Russian Foundation for Basic Research; 066-2019-0004 Ministry of Science and Higher Education of the Russian Federation |
فهرسة مساهمة: | Keywords: SIS structures; diode and FET characteristics; ferroelectric hysteresis; leakage mechanisms; silicon-on-ferroelectric |
تواريخ الأحداث: | Date Created: 20210127 Latest Revision: 20210228 |
رمز التحديث: | 20221213 |
مُعرف محوري في PubMed: | PMC7912112 |
DOI: | 10.3390/nano11020291 |
PMID: | 33499413 |
قاعدة البيانات: | MEDLINE |
تدمد: | 2079-4991 |
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DOI: | 10.3390/nano11020291 |