دورية أكاديمية
Schottky anomaly and Néel temperature treatment of possible perturbed hydrogenated AA-stacked graphene, SiC, and h-BN bilayers.
العنوان: | Schottky anomaly and Néel temperature treatment of possible perturbed hydrogenated AA-stacked graphene, SiC, and h-BN bilayers. |
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المؤلفون: | Hoi BD; Department of Physics, University of Education, Hue University 34 Le Loi Hue City Vietnam thuphuonghueuni@gmail.com., Phuong LTT; Department of Physics, University of Education, Hue University 34 Le Loi Hue City Vietnam thuphuonghueuni@gmail.com., Lam VT; Faculty of Natural Sciences Pedagogy, Sai Gon University 273 An Duong Vuong Str., District 5 Ho Chi Minh City Vietnam., Khoa DQ; Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University Ho Chi Minh City Vietnam.; Faculty of Electrical and Electronics Engineering, Ton Duc Thang University Ho Chi Minh City Vietnam doanquockhoa@tdtu.edu.vn., Tien T; Department of Physics, University of Education, Hue University 34 Le Loi Hue City Vietnam thuphuonghueuni@gmail.com., Binh NTT; Institute of Research and Development, Duy Tan University 03 Quang Trung Danang Vietnam., Phuc HV; Division of Theoretical Physics, Dong Thap University Cao Lanh Vietnam., Hieu NN; Institute of Research and Development, Duy Tan University 03 Quang Trung Danang Vietnam., Nguyen CV; Department of Materials Science and Engineering, Le Quy Don Technical University Hanoi Vietnam. |
المصدر: | RSC advances [RSC Adv] 2019 Dec 16; Vol. 9 (71), pp. 41569-41580. Date of Electronic Publication: 2019 Dec 16 (Print Publication: 2019). |
نوع المنشور: | Journal Article |
اللغة: | English |
بيانات الدورية: | Publisher: Royal Society of Chemistry Country of Publication: England NLM ID: 101581657 Publication Model: eCollection Cited Medium: Internet ISSN: 2046-2069 (Electronic) Linking ISSN: 20462069 NLM ISO Abbreviation: RSC Adv Subsets: PubMed not MEDLINE |
أسماء مطبوعة: | Original Publication: Cambridge [England] : Royal Society of Chemistry, [2011]- |
مستخلص: | In this paper, the potential of engineering and manipulating the electronic heat capacity and Pauli susceptibility of pristine and perturbed hydrogenated AA-stacked graphene, SiC (silicon carbide), and h-BN (hexagonal boron nitride) bilayers is studied using a designed transverse Zeeman magnetic field and the dilute charged impurity. The tight-binding Hamiltonian model, the Born approximation and the Green's function method describe the carrier dynamics up to a certain degree. The unperturbed results show that the heat capacity and susceptibility of all bilayers increase with different hydrogenation doping configurations. We also found that the maximum heat capacity and susceptibility relates to the chair-like and table-like configurations. Also, the graphene possesses the highest activity compared to SiC and h-BN lattices due to its zero on-site energies. For the Zeeman magnetic field-induced Schottky anomaly and the Néel temperature corresponding to the maximum electronic heat capacity, EHC Competing Interests: There are no conflicts to declare. (This journal is © The Royal Society of Chemistry.) |
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تواريخ الأحداث: | Date Created: 20220511 Latest Revision: 20220716 |
رمز التحديث: | 20240628 |
مُعرف محوري في PubMed: | PMC9076474 |
DOI: | 10.1039/c9ra08446k |
PMID: | 35541592 |
قاعدة البيانات: | MEDLINE |
تدمد: | 2046-2069 |
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DOI: | 10.1039/c9ra08446k |