دورية أكاديمية

Schottky anomaly and Néel temperature treatment of possible perturbed hydrogenated AA-stacked graphene, SiC, and h-BN bilayers.

التفاصيل البيبلوغرافية
العنوان: Schottky anomaly and Néel temperature treatment of possible perturbed hydrogenated AA-stacked graphene, SiC, and h-BN bilayers.
المؤلفون: Hoi BD; Department of Physics, University of Education, Hue University 34 Le Loi Hue City Vietnam thuphuonghueuni@gmail.com., Phuong LTT; Department of Physics, University of Education, Hue University 34 Le Loi Hue City Vietnam thuphuonghueuni@gmail.com., Lam VT; Faculty of Natural Sciences Pedagogy, Sai Gon University 273 An Duong Vuong Str., District 5 Ho Chi Minh City Vietnam., Khoa DQ; Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University Ho Chi Minh City Vietnam.; Faculty of Electrical and Electronics Engineering, Ton Duc Thang University Ho Chi Minh City Vietnam doanquockhoa@tdtu.edu.vn., Tien T; Department of Physics, University of Education, Hue University 34 Le Loi Hue City Vietnam thuphuonghueuni@gmail.com., Binh NTT; Institute of Research and Development, Duy Tan University 03 Quang Trung Danang Vietnam., Phuc HV; Division of Theoretical Physics, Dong Thap University Cao Lanh Vietnam., Hieu NN; Institute of Research and Development, Duy Tan University 03 Quang Trung Danang Vietnam., Nguyen CV; Department of Materials Science and Engineering, Le Quy Don Technical University Hanoi Vietnam.
المصدر: RSC advances [RSC Adv] 2019 Dec 16; Vol. 9 (71), pp. 41569-41580. Date of Electronic Publication: 2019 Dec 16 (Print Publication: 2019).
نوع المنشور: Journal Article
اللغة: English
بيانات الدورية: Publisher: Royal Society of Chemistry Country of Publication: England NLM ID: 101581657 Publication Model: eCollection Cited Medium: Internet ISSN: 2046-2069 (Electronic) Linking ISSN: 20462069 NLM ISO Abbreviation: RSC Adv Subsets: PubMed not MEDLINE
أسماء مطبوعة: Original Publication: Cambridge [England] : Royal Society of Chemistry, [2011]-
مستخلص: In this paper, the potential of engineering and manipulating the electronic heat capacity and Pauli susceptibility of pristine and perturbed hydrogenated AA-stacked graphene, SiC (silicon carbide), and h-BN (hexagonal boron nitride) bilayers is studied using a designed transverse Zeeman magnetic field and the dilute charged impurity. The tight-binding Hamiltonian model, the Born approximation and the Green's function method describe the carrier dynamics up to a certain degree. The unperturbed results show that the heat capacity and susceptibility of all bilayers increase with different hydrogenation doping configurations. We also found that the maximum heat capacity and susceptibility relates to the chair-like and table-like configurations. Also, the graphene possesses the highest activity compared to SiC and h-BN lattices due to its zero on-site energies. For the Zeeman magnetic field-induced Schottky anomaly and the Néel temperature corresponding to the maximum electronic heat capacity, EHC Max. , and Pauli spin paramagnetic susceptibility, PSPS Max. , respectively, the pristine EHC Max. (PSPS Max. ) decreases (increases) with the Zeeman field. On the other hand, the corresponding results for reduced table-like and reduced chair-like lattices illustrate that both EHC Max. and PSPS Max. decrease with the Zeeman field, on average. However, under the influence of the dilute charged impurity, the pristine EHC Max. of graphene (SiC and h-BN) decreases (increases) with impurity concentration for all configurations while the corresponding PSPS Max. fluctuates (decreases) for the pristine (reduced table-like and reduced chair-like) case. These findings introduce hydrogenated AA-stacked bilayers as versatile candidates for real applications.
Competing Interests: There are no conflicts to declare.
(This journal is © The Royal Society of Chemistry.)
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تواريخ الأحداث: Date Created: 20220511 Latest Revision: 20220716
رمز التحديث: 20240628
مُعرف محوري في PubMed: PMC9076474
DOI: 10.1039/c9ra08446k
PMID: 35541592
قاعدة البيانات: MEDLINE
الوصف
تدمد:2046-2069
DOI:10.1039/c9ra08446k