دورية أكاديمية
أعرض في EDS

Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates.

التفاصيل البيبلوغرافية
العنوان: Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates.
المؤلفون: Dvoretckaia L; Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia., Gridchin V; Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia.; Institute of Physics, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia., Mozharov A; Institute of Physics, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia., Maksimova A; Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia., Dragunova A; Department of Physics, National Research University Higher School of Economics, Kantemirovskaya 3/1 A, 194100 St. Petersburg, Russia., Melnichenko I; Department of Physics, National Research University Higher School of Economics, Kantemirovskaya 3/1 A, 194100 St. Petersburg, Russia., Mitin D; Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia., Vinogradov A; Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia., Mukhin I; Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia.; Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia.; Higher School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia., Cirlin G; Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia.; Institute of Physics, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia.
المصدر: Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2022 Jun 10; Vol. 12 (12). Date of Electronic Publication: 2022 Jun 10.
نوع المنشور: Journal Article
اللغة: English
بيانات الدورية: Publisher: MDPI AG Country of Publication: Switzerland NLM ID: 101610216 Publication Model: Electronic Cited Medium: Print ISSN: 2079-4991 (Print) Linking ISSN: 20794991 NLM ISO Abbreviation: Nanomaterials (Basel) Subsets: PubMed not MEDLINE
أسماء مطبوعة: Original Publication: Basel, Switzerland : MDPI AG, [2011]-
مستخلص: The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor light-emitting diodes (LED) on crystalline lattice-mismatched Si wafers. Here, we present molecular beam epitaxy of regular arrays n-GaN/i-InGaN/p-GaN heterostructured nanowires and tripods on Si/SiO 2 substrates prepatterned with the use of cost-effective and rapid microsphere optical lithography. This approach provides the selective-area synthesis of the ordered nanowire arrays on large-area Si substrates. We experimentally show that the n-GaN NWs/n-Si interface demonstrates rectifying behavior and the fabricated n-GaN/i-InGaN/p-GaN NWs-based LEDs have electroluminescence in the broad spectral range, with a maximum near 500 nm, which can be employed for multicolor or white light screen development.
References: Nano Lett. 2013;13(11):5437-42. (PMID: 24074440)
Nano Lett. 2014 May 14;14(5):2456-65. (PMID: 24742151)
Nano Lett. 2017 Feb 8;17(2):1212-1218. (PMID: 28081598)
Adv Colloid Interface Sci. 2016 Feb;228:105-22. (PMID: 26732300)
Adv Mater. 2015 Oct 14;27(38):5805-12. (PMID: 26032973)
Nanotechnology. 2019 Sep 27;30(39):395602. (PMID: 31234150)
Nano Lett. 2010 Sep 8;10(9):3355-9. (PMID: 20701296)
Nano Lett. 2015 Oct 14;15(10):6958-64. (PMID: 26322549)
Sci Rep. 2015 Feb 16;5:8332. (PMID: 25684335)
Beilstein J Nanotechnol. 2018 Jan 15;9:146-154. (PMID: 29441260)
Opt Express. 2017 Jan 23;25(2):1381-1390. (PMID: 28158020)
Sci Rep. 2018 Jan 11;8(1):501. (PMID: 29323163)
Opt Express. 2016 Dec 26;24(26):30444-30464. (PMID: 28059392)
ACS Appl Mater Interfaces. 2018 Jan 24;10(3):3058-3068. (PMID: 29280379)
Nanotechnology. 2012 Nov 23;23(46):465301. (PMID: 23092897)
Nano Lett. 2015 Mar 11;15(3):1773-9. (PMID: 25633130)
Nanomaterials (Basel). 2021 Aug 16;11(8):. (PMID: 34443910)
Nanoscale. 2017 Jun 14;9(23):7805-7813. (PMID: 28290591)
ACS Nano. 2012 Jun 26;6(6):5687-92. (PMID: 22607154)
معلومات مُعتمدة: 21-79-10202 Russian Science Foundation; 0791-2020-0003 and № 0791-2020-0005 Ministry of Science and Higher Education of the Russian Federation; Basic Research Program at the National Research University Higher School of Economics (HSE University)
فهرسة مساهمة: Keywords: III-N; Si; light-emitting devices; microsphere lithography; molecular beam epitaxy; nanowires
تواريخ الأحداث: Date Created: 20220624 Latest Revision: 20220716
رمز التحديث: 20231215
مُعرف محوري في PubMed: PMC9230727
DOI: 10.3390/nano12121993
PMID: 35745332
قاعدة البيانات: MEDLINE
الوصف
تدمد:2079-4991
DOI:10.3390/nano12121993