دورية أكاديمية
Electrical switching of a bistable moiré superconductor.
العنوان: | Electrical switching of a bistable moiré superconductor. |
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المؤلفون: | Klein DR; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA. dahlia.klein@weizmann.ac.il.; Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel. dahlia.klein@weizmann.ac.il., Xia LQ; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA., MacNeill D; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA., Watanabe K; National Institute for Materials Science, Tsukuba, Japan., Taniguchi T; National Institute for Materials Science, Tsukuba, Japan., Jarillo-Herrero P; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA. pjarillo@mit.edu. |
المصدر: | Nature nanotechnology [Nat Nanotechnol] 2023 Apr; Vol. 18 (4), pp. 331-335. Date of Electronic Publication: 2023 Jan 30. |
نوع المنشور: | Journal Article |
اللغة: | English |
بيانات الدورية: | Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101283273 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1748-3395 (Electronic) Linking ISSN: 17483387 NLM ISO Abbreviation: Nat Nanotechnol Subsets: PubMed not MEDLINE; MEDLINE |
أسماء مطبوعة: | Original Publication: London : Nature Pub. Group, 2006- |
مستخلص: | Electrical control of superconductivity is critical for nanoscale superconducting circuits including cryogenic memory elements 1-4 , superconducting field-effect transistors (FETs) 5-7 and gate-tunable qubits 8-10 . Superconducting FETs operate through continuous tuning of carrier density, but no bistable superconducting FET, which could serve as a new type of cryogenic memory element, has been reported. Recently, gate hysteresis and resultant bistability in Bernal-stacked bilayer graphene aligned to its insulating hexagonal boron nitride gate dielectrics were discovered 11,12 . Here we report the observation of this same hysteresis in magic-angle twisted bilayer graphene (MATBG) with aligned boron nitride layers. This bistable behaviour coexists alongside the strongly correlated electron system of MATBG without disrupting its correlated insulator or superconducting states. This all-van der Waals platform enables configurable switching between different electronic states of this rich system. To illustrate this new approach, we demonstrate reproducible bistable switching between the superconducting, metallic and correlated insulator states of MATBG using gate voltage or electric displacement field. These experiments unlock the potential to broadly incorporate this new switchable moiré superconductor into highly tunable superconducting electronics. (© 2023. The Author(s), under exclusive licence to Springer Nature Limited.) |
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معلومات مُعتمدة: | FA9550-19-1-0390 United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research (AF Office of Scientific Research); DMR-0819762 National Science Foundation (NSF); ECS-0335765 National Science Foundation (NSF); W911NF2120147 United States Department of Defense | United States Army | U.S. Army Research, Development and Engineering Command | Army Research Office (ARO); JPMXP0112101001 MEXT | National Institute for Materials Science (NIMS); JP20H00354 MEXT | Japan Society for the Promotion of Science (JSPS); JPMJCR15F3 MEXT | JST | Core Research for Evolutional Science and Technology (CREST); GBMF9463 Gordon and Betty Moore Foundation (Gordon E. and Betty I. Moore Foundation) |
تواريخ الأحداث: | Date Created: 20230130 Date Completed: 20230420 Latest Revision: 20230420 |
رمز التحديث: | 20231215 |
DOI: | 10.1038/s41565-022-01314-x |
PMID: | 36717710 |
قاعدة البيانات: | MEDLINE |
تدمد: | 1748-3395 |
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DOI: | 10.1038/s41565-022-01314-x |