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A GHz Silicon-Based Width Extensional Mode MEMS Resonator with Q over 10,000.

التفاصيل البيبلوغرافية
العنوان: A GHz Silicon-Based Width Extensional Mode MEMS Resonator with Q over 10,000.
المؤلفون: Liu W; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.; State Key Laboratory of Transducer Technology, Shanghai 200050, China., Lu Y; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.; State Key Laboratory of Transducer Technology, Shanghai 200050, China., Chen Z; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Kunming Institute of Physics, Kunming 650223, China., Jia Q; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.; State Key Laboratory of Transducer Technology, Shanghai 200050, China., Zhao J; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.; State Key Laboratory of Transducer Technology, Shanghai 200050, China., Niu B; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.; State Key Laboratory of Transducer Technology, Shanghai 200050, China., Wang W; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.; State Key Laboratory of Transducer Technology, Shanghai 200050, China., Hao Y; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China., Zhu Y; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.; State Key Laboratory of Transducer Technology, Shanghai 200050, China., Yang J; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.; State Key Laboratory of Transducer Technology, Shanghai 200050, China., Yang F; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
المصدر: Sensors (Basel, Switzerland) [Sensors (Basel)] 2023 Apr 07; Vol. 23 (8). Date of Electronic Publication: 2023 Apr 07.
نوع المنشور: Journal Article
اللغة: English
بيانات الدورية: Publisher: MDPI Country of Publication: Switzerland NLM ID: 101204366 Publication Model: Electronic Cited Medium: Internet ISSN: 1424-8220 (Electronic) Linking ISSN: 14248220 NLM ISO Abbreviation: Sensors (Basel) Subsets: PubMed not MEDLINE; MEDLINE
أسماء مطبوعة: Original Publication: Basel, Switzerland : MDPI, c2000-
مستخلص: This work presents a silicon-based capacitively transduced width extensional mode (WEM) MEMS rectangular plate resonator with quality factor ( Q ) of over 10,000 at a frequency of greater than 1 GHz. The Q value, determined by various loss mechanisms, was analyzed and quantified via numerical calculation and simulation. The energy loss of high order WEMs is dominated by anchor loss and phonon-phonon interaction dissipation (PPID). High-order resonators possess high effective stiffness, resulting in large motional impedance. To suppress anchor loss and reduce motional impedance, a novel combined tether was designed and comprehensively optimized. The resonators were batch fabricated based on a reliable and simple silicon-on-insulator (SOI)-based fabrication process. The combined tether experimentally contributes to low anchor loss and motional impedance. Especially in the 4th WEM, the resonator with a resonance frequency of 1.1 GHz and a Q of 10,920 was demonstrated, corresponding to the promising f × Q product of 1.2 × 10 13 . By using combined tether, the motional impedance decreases by 33% and 20% in 3rd and 4th modes, respectively. The WEM resonator proposed in this work has potential application for high-frequency wireless communication systems.
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معلومات مُعتمدة: 61734007 National Natural Science Foundation of China; 62234012 National Natural Science Foundation of China; 2022YFF0706102 National Key Research and Development Program of China
فهرسة مساهمة: Keywords: GHz frequency; MEMS resonator; quality factor; width extensional mode
تواريخ الأحداث: Date Created: 20230428 Date Completed: 20230430 Latest Revision: 20230430
رمز التحديث: 20240513
مُعرف محوري في PubMed: PMC10143676
DOI: 10.3390/s23083808
PMID: 37112146
قاعدة البيانات: MEDLINE
الوصف
تدمد:1424-8220
DOI:10.3390/s23083808