دورية أكاديمية
Ultrafast exciton fluid flow in an atomically thin MoS 2 semiconductor.
العنوان: | Ultrafast exciton fluid flow in an atomically thin MoS |
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المؤلفون: | Del Águila AG; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore. andres.granados.delaguila@gmail.com., Wong YR; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore., Wadgaonkar I; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore., Fieramosca A; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore., Liu X; Institutes of Physical Science and Information Technology, Anhui University, Hefei, P.R. China., Vaklinova K; Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore., Dal Forno S; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore., Do TTH; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Republic of Singapore., Wei HY; Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore.; Department of Physics, National University of Singapore, Singapore, Singapore., Watanabe K; National Institute for Materials Science, Tsukuba, Japan., Taniguchi T; National Institute for Materials Science, Tsukuba, Japan., Novoselov KS; Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore.; Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore., Koperski M; Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore.; Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore., Battiato M; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore., Xiong Q; State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, P.R. China. qihua_xiong@tsinghua.edu.cn.; Frontier Science Center for Quantum Information, Beijing, P.R. China. qihua_xiong@tsinghua.edu.cn.; Collaborative Innovation Center of Quantum Matter, Beijing, P.R. China. qihua_xiong@tsinghua.edu.cn.; Beijing Academy of Quantum Information Sciences, Beijing, P.R. China. qihua_xiong@tsinghua.edu.cn. |
المصدر: | Nature nanotechnology [Nat Nanotechnol] 2023 Sep; Vol. 18 (9), pp. 1012-1019. Date of Electronic Publication: 2023 Jul 31. |
نوع المنشور: | Journal Article |
اللغة: | English |
بيانات الدورية: | Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101283273 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1748-3395 (Electronic) Linking ISSN: 17483387 NLM ISO Abbreviation: Nat Nanotechnol Subsets: PubMed not MEDLINE; MEDLINE |
أسماء مطبوعة: | Original Publication: London : Nature Pub. Group, 2006- |
مستخلص: | Excitons (coupled electron-hole pairs) in semiconductors can form collective states that sometimes exhibit spectacular nonlinear properties. Here, we show experimental evidence of a collective state of short-lived excitons in a direct-bandgap, atomically thin MoS (© 2023. The Author(s), under exclusive licence to Springer Nature Limited.) |
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معلومات مُعتمدة: | MOE2018-T3-1-002 Ministry of Education - Singapore (MOE); 12104006 National Natural Science Foundation of China (National Science Foundation of China) |
تواريخ الأحداث: | Date Created: 20230731 Latest Revision: 20230922 |
رمز التحديث: | 20231215 |
DOI: | 10.1038/s41565-023-01438-8 |
PMID: | 37524907 |
قاعدة البيانات: | MEDLINE |
تدمد: | 1748-3395 |
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DOI: | 10.1038/s41565-023-01438-8 |