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Dilute Rhenium Doping and its Impact on Defects in MoS 2 .

التفاصيل البيبلوغرافية
العنوان: Dilute Rhenium Doping and its Impact on Defects in MoS 2 .
المؤلفون: Torsi R; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States., Munson KT; Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States., Pendurthi R; Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States., Marques E; Imec, Leuven 3001, Belgium.; Department of Molecular Design and Synthesis, KU Leuven, Celestijnenlaan 200f - Postbox 2404, 3001 Leuven, Belgium., Van Troeye B; Imec, Leuven 3001, Belgium., Huberich L; nanotech@surfaces Laboratory, Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland., Schuler B; nanotech@surfaces Laboratory, Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland., Feidler M; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States., Wang K; Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States., Pourtois G; Imec, Leuven 3001, Belgium., Das S; Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States., Asbury JB; Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States., Lin YC; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.; Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu City, 300093, Taiwan., Robinson JA; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.; Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.; Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.; Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
المصدر: ACS nano [ACS Nano] 2023 Aug 22; Vol. 17 (16), pp. 15629-15640. Date of Electronic Publication: 2023 Aug 03.
نوع المنشور: Journal Article
اللغة: English
بيانات الدورية: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101313589 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1936-086X (Electronic) Linking ISSN: 19360851 NLM ISO Abbreviation: ACS Nano Subsets: PubMed not MEDLINE; MEDLINE
أسماء مطبوعة: Original Publication: Washington D.C. : American Chemical Society
مستخلص: Substitutionally doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional rhenium (Re) doping of MoS 2 monolayers with controllable concentrations down to 500 ppm by metal-organic chemical vapor deposition (MOCVD). Surprisingly, we discover that even trace amounts of Re lead to a reduction in sulfur site defect density by 5-10×. Ab initio models indicate the origin of the reduction is an increase in the free-energy of sulfur-vacancy formation at the MoS 2 growth-front when Re is introduced. Defect photoluminescence (PL) commonly seen in undoped MOCVD MoS 2 is suppressed by 6× at 0.05 atomic percent (at. %) Re and completely quenched with 1 at. % Re. Furthermore, we find that Re-MoS 2 transistors exhibit a 2× increase in drain current and carrier mobility compared to undoped MoS 2 , indicating that sulfur vacancy reduction improves carrier transport in the Re-MoS 2 . This work provides important insights on how dopants affect 2D semiconductor growth dynamics, which can lead to improved crystal quality and device performance.
فهرسة مساهمة: Keywords: 2D transition metal dichalcogenides; chalcogen vacancy formation; metal−organic chemical vapor deposition; photoluminescence; substitutional doping
تواريخ الأحداث: Date Created: 20230803 Latest Revision: 20230822
رمز التحديث: 20230822
DOI: 10.1021/acsnano.3c02626
PMID: 37534591
قاعدة البيانات: MEDLINE
الوصف
تدمد:1936-086X
DOI:10.1021/acsnano.3c02626