دورية أكاديمية

Magnetron Sputtering Deposition of High Quality Cs 3 Bi 2 I 9 Perovskite Thin Films.

التفاصيل البيبلوغرافية
العنوان: Magnetron Sputtering Deposition of High Quality Cs 3 Bi 2 I 9 Perovskite Thin Films.
المؤلفون: Caporali S; Department of Industrial Engineering (DIEF), University of Florence, Via di Santa Marta n. 3, 50139 Florence, Italy.; National Interuniversity Consortium of Materials Science and Technology (INSTM), Florence Research Unit, Via G. Giusti n. 9, 50121 Florence, Italy., Martinuzzi SM; Department of Chemistry 'Ugo Schiff' (DICUS), University of Florence, Via della Lastruccia n. 3, 50019 Sesto Fiorentino, Italy., Gabellini L; Department of Industrial Engineering (DIEF), University of Florence, Via di Santa Marta n. 3, 50139 Florence, Italy., Calisi N; Department of Industrial Engineering (DIEF), University of Florence, Via di Santa Marta n. 3, 50139 Florence, Italy.; National Interuniversity Consortium of Materials Science and Technology (INSTM), Florence Research Unit, Via G. Giusti n. 9, 50121 Florence, Italy.
المصدر: Materials (Basel, Switzerland) [Materials (Basel)] 2023 Jul 27; Vol. 16 (15). Date of Electronic Publication: 2023 Jul 27.
نوع المنشور: Journal Article
اللغة: English
بيانات الدورية: Publisher: MDPI Country of Publication: Switzerland NLM ID: 101555929 Publication Model: Electronic Cited Medium: Print ISSN: 1996-1944 (Print) Linking ISSN: 19961944 NLM ISO Abbreviation: Materials (Basel) Subsets: PubMed not MEDLINE
أسماء مطبوعة: Publication: May 2010- : Basel, Switzerland : MDPI
Original Publication: Basel, Switzerland : Molecular Diversity Preservation International, 2008-2010.
مستخلص: Nontoxic all-inorganic perovskites are among the most promising materials for the realization of optoelectronic devices. Here, we present an innovative way to deposit lead-free, totally inorganic Cs 3 Bi 2 I 9 perovskite from vapor phase. Taking use of a magnetron sputtering system equipped with a radiofrequency working mode power supply and a single target containing the correct ratio of CsI and BiI 3 salts, it was possible to deposit a Cs 3 Bi 2 I 9 perovskitic film on silicon and soda-lime glass. The target composition was optimized to obtain a stoichiometric deposition, and the best compromise was found with a mix enriched with 20% w / w of CsI. Secondly, the effect of post-deposition thermal treatments (150 °C and 300 °C) and of the deposition on a preheat substrate (150 °C) were evaluated by analyzing the chemical composition, the morphology, the crystal structure, and the optical properties. The thermal treatment at 150 °C improved the uniformity of the perovskite film; the one at 300 °C damaged the perovskite deposited. Depositing on a preheated substrate at 150 °C, the obtained film showed a higher crystallinity. An additional thermal treatment at 150 °C on the film deposed on the preheated substrate showed that the crystallinity remains high, and the morphology becomes more uniform.
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معلومات مُعتمدة: Project code PE_00000004, CUP B83C22004890007 National Recovery and Resilience Plan (NRRP), Mission 4 Component 2 Investment 1.3 - Call for tender No. 341 of 15 March 2023 of Italian Ministry of University and Research (MUR) funded by the European Union - NextGenerationEU,; CUP 3647.04032020.157000057_1225 Project title "3A-ITALY" and by Regione Toscana POR CreO FESR 2014-2020, Azione 1.1.5 sub A1) Bando 1 "Progetti Strategici di Ricerca e Sviluppo" which made possible the project "Innovativo processo di deposizione PVD su Rubinetteria ed Accessori Moda med; CUP: B97G22000740001 Italian Ministry of Education and Research (MUR) through Dipartimenti di Eccellenza 2023-2027 (DICUS 2.0) to the Department of Chemistry "Ugo Schiff" of the Univer-sity of Florence.; ref. 2020.1634 Fondazione Cassa di Risparmio di Firenze through the SPIN-E2 project
فهرسة مساهمة: Keywords: Cs3BI2I9; lead-free; magnetron sputtering; perovskite; temperature
تواريخ الأحداث: Date Created: 20230812 Latest Revision: 20230814
رمز التحديث: 20231215
مُعرف محوري في PubMed: PMC10419619
DOI: 10.3390/ma16155276
PMID: 37569977
قاعدة البيانات: MEDLINE
الوصف
تدمد:1996-1944
DOI:10.3390/ma16155276