دورية أكاديمية
Theoretical limit and framework of dynamic modulation in spoof surface plasmon polariton interconnects.
| العنوان: | Theoretical limit and framework of dynamic modulation in spoof surface plasmon polariton interconnects. |
|---|---|
| المؤلفون: | Nayem SH, Imtiaz N, Roy Joy S, Baten MZ |
| المصدر: | Optics express [Opt Express] 2023 Aug 28; Vol. 31 (18), pp. 29536-29557. |
| نوع المنشور: | Journal Article |
| اللغة: | English |
| بيانات الدورية: | Publisher: Optica Publishing Group Country of Publication: United States NLM ID: 101137103 Publication Model: Print Cited Medium: Internet ISSN: 1094-4087 (Electronic) Linking ISSN: 10944087 NLM ISO Abbreviation: Opt Express Subsets: PubMed not MEDLINE; MEDLINE |
| أسماء مطبوعة: | Publication: Washington, DC : Optica Publishing Group Original Publication: Washington, DC : Optical Society of America, 1997- |
| مستخلص: | Spoof-surface-plasmon-polariton (SSPP) interconnects are potential candidates for next-generation interconnects to satisfy the growing demand for high-speed, large-volume data transfer in chip-to-chip and inter-chip communication networks. As in any interconnect, the viability and efficiency of the modulation technique employed will play a crucial role in the effective utilization of SSPP interconnects. In light of the lack of a comprehensive platform for the performance analysis of SSPP signal modulation, this work presents a theoretical framework that contributes to the following: 1) predictions of the maximum attainable modulation speed, limited by geometric dispersion in SSPP waveguide, 2) quantification of the fundamental trade-off relation between modulation speed and energy-efficiency for an arbitrary design of SSPP structure, 3) extension of the analysis over a broad category of SSPP modulation technique. In conjunction, a novel SSPP signal modulation technique is introduced, involving controlled alteration of the resonant condition of the SSPP interconnect using a variable resistor. Analyzing a sample SSPP waveguide with a 7 GHz cut-off frequency, the study identifies a potential ∼28 % change in its transmission-band by varying the implanted resistor from 5kΩ to 5Ω, a range of values practically attainable with gate-controlled, state-of-the-art submicron scale field-effect transistors. The assertions of the theoretical model have been independently validated by finite-element method based numerical simulations, which show that the underlying concept can be utilized to realize the digital modulation scheme of the amplitude shift keying. For a millimeter-scale SSPP channel having 2.75 GHz transmission bandwidth, up to 300 Mbps modulation speed with nominal power loss is achieved in a standard, thermal-noise limited communication system. By scaling the interconnect to micrometer dimensions, the speed can be augmented up to 10 Gbps for data transfer over 100 mm distance with ≥80 % energy efficiency. Essentially, the presented theory is the first of its kind that provides the foundational design guideline for designing and optimizing diverse range of SSPP modulators. |
| تواريخ الأحداث: | Date Created: 20230915 Latest Revision: 20230915 |
| رمز التحديث: | 20231215 |
| DOI: | 10.1364/OE.497398 |
| PMID: | 37710752 |
| قاعدة البيانات: | MEDLINE |
Full Text Finder | تدمد: | 1094-4087 |
|---|---|
| DOI: | 10.1364/OE.497398 |