التفاصيل البيبلوغرافية
| العنوان: |
A 37-40 GHz 6-Bits Switched-Filter Phase Shifter Using 150 nm GaN HEMT. |
| المؤلفون: |
Song JH; Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Republic of Korea., Lee EG; Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Republic of Korea., Lee JE; Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Republic of Korea., Son JT; Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Republic of Korea., Kim JH; Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Republic of Korea., Baek MS; Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Republic of Korea., Kim CY; Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Republic of Korea. |
| المصدر: |
Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2023 Oct 12; Vol. 13 (20). Date of Electronic Publication: 2023 Oct 12. |
| نوع المنشور: |
Journal Article |
| اللغة: |
English |
| بيانات الدورية: |
Publisher: MDPI AG Country of Publication: Switzerland NLM ID: 101610216 Publication Model: Electronic Cited Medium: Print ISSN: 2079-4991 (Print) Linking ISSN: 20794991 NLM ISO Abbreviation: Nanomaterials (Basel) Subsets: PubMed not MEDLINE |
| أسماء مطبوعة: |
Original Publication: Basel, Switzerland : MDPI AG, [2011]- |
| مستخلص: |
In this paper, we present a 6-bit phase shifter designed and fabricated using the 150 nm GaN HEMT process. The designed phase shifter operates within the n260 (37~40 GHz) band, as specified in the 5G NR standard, and employs the structure of a switched-filter phase shifter. By serially connecting six single-bit phase shifters, ranging from 180° to 5.625°, the designed phase shifter achieves a phase range of 360°. The fabricated phase shifter exhibits a minimum insertion loss of 5 dB and an RMS phase error of less than 5.36° within the 37 to 40 GHz. This phase shifter is intended for seamless integration with high-power RF circuits. |
| فهرسة مساهمة: |
Keywords: 5G NR (n260); GaN HEMT; STPS; T-type filter; phase shifter |
| تواريخ الأحداث: |
Date Created: 20231027 Latest Revision: 20231029 |
| رمز التحديث: |
20231215 |
| مُعرف محوري في PubMed: |
PMC10609565 |
| DOI: |
10.3390/nano13202752 |
| PMID: |
37887904 |
| قاعدة البيانات: |
MEDLINE |
Full Text Finder