التفاصيل البيبلوغرافية
| العنوان: |
Versatile Titanium Carbide MXene Thin-Film Memristors with Adaptive Learning Behavior. |
| المؤلفون: |
Thomas A; eNDR Laboratory, School of Physics, IISER Thiruvananthapuram, Trivandrum, Kerala 695551, India., Saha P; eNDR Laboratory, School of Physics, IISER Thiruvananthapuram, Trivandrum, Kerala 695551, India., Sahad E M; eNDR Laboratory, School of Physics, IISER Thiruvananthapuram, Trivandrum, Kerala 695551, India., Krishnan K N; eNDR Laboratory, School of Physics, IISER Thiruvananthapuram, Trivandrum, Kerala 695551, India., Das BC; eNDR Laboratory, School of Physics, IISER Thiruvananthapuram, Trivandrum, Kerala 695551, India. |
| المصدر: |
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Apr 09. Date of Electronic Publication: 2024 Apr 09. |
| Publication Model: |
Ahead of Print |
| نوع المنشور: |
Journal Article |
| اللغة: |
English |
| بيانات الدورية: |
Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE |
| أسماء مطبوعة: |
Original Publication: Washington, D.C. : American Chemical Society |
| مستخلص: |
With the advent of the modern era, there is a huge demand for memristor-based neuromorphic computing hardware to overcome the von Neumann bottleneck in traditional computers. Here, we have prepared two-dimensional titanium carbide (Ti 3 C 2 T x ) MXene following the conventional HF etching technique in solution. After confirmation of Ti 3 C 2 T x properties by Raman scattering and crystallinity measurements, high-quality thin-film deposition is realized using an immiscible liquid-liquid interfacial growth technique. Following this, the memristor is fabricated by sandwiching a Ti 3 C 2 T x layer with a thickness of 70 nm between two electrodes. Subsequently, current-voltage ( I-V ) characteristics are measured, revealing a nonvolatile resistive switching property characterized by a swift switching speed of 30 ns and an impressive current On/Off ratio of approximately 10 3 . Furthermore, it exhibits endurance through 500 cycles and retains the states for at least 1 × 10 4 s without observable degradation. Additionally, it maintains a current On/Off ratio of about 10 2 while consuming only femtojoules (fJ) of electrical energy per reading. Systematic I-V results and conductive AFM-based current mapping image analysis are converged to support the electroforming mediated filamentary conduction mechanism. Furthermore, our Ti 3 C 2 T x memristor was found to be truly versatile as an all-in-one device for demonstrating edge computation, logic gate operation, and classical conditioning of learning by the brain in Psychology. |
| فهرسة مساهمة: |
Keywords: MXene; classical conditioning; conductive AFM; edge computation; memristor; thin film |
| تواريخ الأحداث: |
Date Created: 20240409 Latest Revision: 20240409 |
| رمز التحديث: |
20240410 |
| DOI: |
10.1021/acsami.3c19177 |
| PMID: |
38594622 |
| قاعدة البيانات: |
MEDLINE |
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