دورية أكاديمية

Performance comparison of flip-chip blue-light microLEDs with various passivation.

التفاصيل البيبلوغرافية
العنوان: Performance comparison of flip-chip blue-light microLEDs with various passivation.
المؤلفون: Hsu YH; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC.; Department of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC., Lin XD; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC., Lin YH; Department of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC., Wuu DS; Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou, 54561, Taiwan, ROC., Horng RH; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC. rayhua@nycu.edu.tw.
المصدر: Discover nano [Discov Nano] 2024 Aug 16; Vol. 19 (1), pp. 129. Date of Electronic Publication: 2024 Aug 16.
نوع المنشور: Journal Article
اللغة: English
بيانات الدورية: Publisher: Springer Nature Switzerland Country of Publication: Switzerland NLM ID: 9918540788706676 Publication Model: Electronic Cited Medium: Internet ISSN: 2731-9229 (Electronic) Linking ISSN: 27319229 NLM ISO Abbreviation: Discov Nano Subsets: PubMed not MEDLINE
أسماء مطبوعة: Original Publication: [Cham, Switzerland] : Springer Nature Switzerland, [2023]-
مستخلص: In this study, arrays of μLEDs in four different sizes (5 × 5 μm 2 , 10 × 10 μm 2 , 25 × 25 μm 2 , 50 × 50 μm 2 ) were fabricated using a flip-chip bonding process. Two passivation processes were investigated with one involving a single layer of SiO 2 deposited using plasma-enhanced chemical vapor deposition (PECVD) and the other incorporating Al 2 O 3 deposited by atomic layer deposition (ALD) beneath the SiO 2 layer. Owing to superior coverage and protection, the double-layers passivation process resulted in a three-order lower leakage current of μLEDs in the 5 μm chip-sized μLED arrays. Furthermore, higher light output power of μLEDs was observed in each chip-sized μLED array with double layers passivation. Particularly, the highest EQE value 21.9% of μLEDs array with 5 μm × 5 μm chip size was achieved with the double-layers passivation. The EQE value of μLEDs array was improved by 4.4 times by introducing the double-layers passivation as compared with that of μLEDs array with single layer passivation. Finally, more uniform light emission patterns were observed in the μLEDs with 5 μm × 5 μm chip size fabricated by double-layer passivation process using ImageJ software.
(© 2024. The Author(s).)
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معلومات مُعتمدة: 112-2218- E-A49-022-MBK National Sience and Technology Council (Taiwan); 112-2218- E-A49-022-MBK National Sience and Technology Council (Taiwan); 112-2218- E-A49-022-MBK National Sience and Technology Council (Taiwan); 112-2218- E-A49-022-MBK National Sience and Technology Council (Taiwan); 112-2218- E-A49-022-MBK National Sience and Technology Council (Taiwan)
فهرسة مساهمة: Keywords: Atomic layer deposition; Blue light; Double layers passivation; Flip-chip bonding; Micro-LED
تواريخ الأحداث: Date Created: 20240816 Latest Revision: 20240819
رمز التحديث: 20240819
مُعرف محوري في PubMed: PMC11329445
DOI: 10.1186/s11671-024-04078-6
PMID: 39150592
قاعدة البيانات: MEDLINE
الوصف
تدمد:2731-9229
DOI:10.1186/s11671-024-04078-6