التفاصيل البيبلوغرافية
| العنوان: |
Characterization of Si and SiO x films deposited in very high-frequency excited atmospheric-pressure plasma and their application to bottom-gate thin film transistors. |
| المؤلفون: |
Kakiuchi, Hiroaki, Ohmi, Hiromasa, Yamada, Takahiro, Tamaki, Shogo, Sakaguchi, Takayuki, Lin, WeiCheng, Yasutake, Kiyoshi |
| المصدر: |
Physica Status Solidi. A: Applications & Materials Science; Jul2015, Vol. 212 Issue 7, p1571-1577, 7p |
| مصطلحات موضوعية: |
SILICON, THIN films, MAGNETRON sputtering, ELLIPSOMETRY, MULTILAYERS |
| مستخلص: |
Silicon (Si) and its alloys, such as silicon oxides (SiO x) and silicon nitrides, are indispensable thin film materials for the fabrication of large-area electronic devices. The goal of the present study is to develop a highly efficient deposition technology for good-quality hydrogenated amorphous Si (a-Si), microcrystalline Si (µc-Si), and SiO x films on flexible polymer substrates. For this purpose, we have been using atmospheric-pressure (AP) plasma excited by a 150 MHz very high-frequency (VHF) power. The changes of thickness and structure of the Si and SiO x films in the gas flow direction were studied as a function of distance from the plasma entrance, VHF power density, and gas flow rates. Based on the results, the performance of bottom-gate TFTs with the Si channel and SiO x gate insulator layers being deposited using AP-VHF plasma were examined to test the applicability of the Si and SiO x films to actual TFTs. A TFT with a field-effect mobility of ∼1.7 cm2 V−1s−1 was obtained at a temperature of 120 °C. [ABSTRACT FROM AUTHOR] |
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